BAV19W thru bav21w vishay semiconductors formerly general semiconductor document number 88150 www.vishay.com 14-may-02 1 small-signal diodes maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit continuous reverse voltage BAV19W 100 bav20w v r 150 v bav21w 200 repetitive peak reverse voltage BAV19W 120 bav20w v rrm 200 v bav21w 250 forward dc current at t amb = 25 ci f 250 (1) ma rectified current (average) half wave rectification with resist. load i f(av) 200 (1) ma at t amb = 25 c and f 50hz repetitive peak forward current i frm 625 (1) ma at f 50hz, = 180 , t amb = 25 c surge forward current at t < 1s, t j = 25 ci fsm 1a power dissipation at t amb = 25 cp tot 410 (1) mw thermal resistance junction to ambiant air r ja 375 (1) c/w junction temperature t j 150 (1) c storage temperature range t s 65 to +150 (1) c note: (1) valid provided that leads are kept at ambient temperature. .022 (0.55) .112 (2.85) .152 (3.85) .067 (1.70) .053 (1.35) max. .010 (0.25) min. cathode band .006 (0.15) max. to p v i ew .140 (3.55) .100 (2.55) .055 (1.40) .004 (0.1) max. features silicon epitaxial planar diodes for general purpose these diodes are also available in other case styles including: the do-35 case with the type designations bav19 to bav21, the minimelf case with the type designations bav100 to bav103, the sot-23 case with the type designations bas19 to bas21, and the sod-323 case with type designations BAV19Ws to bav21ws. sod-123 mechanical data case: do-35 glass case weight: approx. 0.01g marking BAV19W = a8 code: bav20w = a9 bav21w = aa packaging codes/options: d3/10k per 13 reel (8mm tape), 30k/box d4/3k per 7 reel (8mm tape), 30k/box dimensions in inches and (millimeters) 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) mounting pad layout
BAV19W thru bav21w vishay semiconductors formerly general semiconductor www.vishay.com document number 88150 2 14-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit forward voltage v f i f = 100ma 1.00 v i f = 200ma 1.25 BAV19W v r = 100v 100 na leakage current BAV19W v r = 100v, t j = 100 c 15 a bav20w i r v r = 150v 100 na bav20w v r = 150v, t j = 100 c 15 a bav21w v r = 200v 100 na bav21w v r = 200v, t j = 100 c 15 a dynamic forward resistance r f i f = 10ma 5 ? capacitance c tot v r = 0, f = 1mhz 1.5 pf reverse recovery time t rr i f = 30ma, i r = 30ma 50 ns i rr = 3ma, r l = 100 ? ratings and characteristic curves (t a = 25 c unless otherwise noted)
BAV19W thru bav21w vishay semiconductors formerly general semiconductor document number 88150 www.vishay.com 14-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) ?
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